Variable resistive memory device and method of driving a variable resistive memory device
AssigneeSK hynix Inc.
InventorsKi Won LEE, Seok Man HONG, Tae Hoon KIM, Hyung Dong LEE
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Abstract
A variable resistive memory device includes a memory cell, a first circuit, and a second circuit. The memory cell is connected between a word line and a bit line. The first circuit provides the bit line with a first pulse voltage based on at least one enable signal. The second circuit provides the word line with a second pulse voltage based on the enable signal. The first circuit generates the first pulse voltage increased in steps from an initial voltage level to a target voltage level.
Claims21
A variable resistive memory device comprising:
- a memory cell connected between a word line and a bit line;
- a first circuit for providing the bit line with a first pulse voltage based on at least one enable signal;
- and
- a second circuit for providing the word line with a second pulse voltage based on the at least one enable signal,
- wherein the first circuit generates the first pulse voltage to increase in steps from an initial voltage level to a target voltage level.
A variable resistive memory device comprising:
- a memory cell array including a plurality of memory cells, each of the memory cells including a plurality of word lines, a plurality of bit lines, and a resistance layer connected between the word lines and the bit lines;
- and
- a control block for selecting a selected memory cell among the plurality of memory cells, for applying a voltage between a selected bit line among the plurality of bit lines and a selected word line among the plurality of word lines connected with the selected memory cell to generate a minimum voltage difference for turning-on the selected memory cell, and for increasing in steps the voltage applied to the selected bit line to a target voltage level when the selected memory cell is turned-on.
21-29. (canceled)
Dependencies are inferred from the claim text.