Memory cell and methods thereof

A method for processing a memory cell, the method comprising:

• forming a field-effect transistor structure, the field-effect transistor structure comprising a channel region and a gate structure disposed on at least two opposing sides of the channel region, the gate structure comprising a gate electrode structure and a gate isolation structure disposed between the gate electrode structure and the channel region;
• forming one or more metallization structures over the field-effect transistor structure;
• and
• forming a memory structure over the one or more metallization structures, the memory structure comprising a first electrode structure, a second electrode structure, and at least one remanent-polarizable layer disposed between the first electrode structure and the second electrode structure;
• wherein the first electrode structure of the memory structure is electrically conductively connected to the gate electrode structure of the field-effect transistor structure via the one or more metallization structures.