Integrated Assemblies Which Include Non-Conductive-Semiconductor-Material and Conductive-Semiconductor-Material, and Methods of Forming Integrated Assemblies

An integrated assembly, comprising:

• laterally-spaced digit-line-contact-regions;
• the digit-line-contact-regions being comprised by pillars of active-region-material;
• intervening regions being between the laterally-spaced digit-line-contact-regions;
• non-conductive-semiconductor-material over the intervening regions;
• openings extending through the non-conductive-semiconductor-material to the digit-line-contact-regions;
• a lower surface of the non-conductive-semiconductor-material being vertically-spaced from upper surfaces of the digit-line-contact-regions;
• conductive-semiconductor-material-interconnects within the openings and coupled with the digit-line-contact-regions, upper surfaces of the conductive-semiconductor-material-interconnects being beneath the lower surface of the non-conductive-semiconductor-material;
• and
• metal-containing-digit-lines over the non-conductive-semiconductor-material;
• conductive regions extending downwardly from the metal-containing-digit-lines to couple with the conductive-semiconductor-material-interconnects.

An integrated assembly, comprising:

• an access transistor including a digit-line-contact-region;
• non-conductive-semiconductor-material over the access transistor, the non-conductive-semiconductor-material including an opening that is vertically aligned with the digit-line-contact-region;
• insulative material between the non-conductive-semiconductor-material and the access transistor;
• a digit line over the non-conductive-semiconductor-material, the digit line including a conductive interconnect protruding from a part of the digit line toward the digit-line-contact-region;
• wherein each of the digit line and the conductive interconnect comprises metal;
• wherein the conductive interconnect penetrates through the opening and is in electrical contact with the digit-line-contact-region;
• wherein the insulative material includes an additional opening that is vertically aligned with the digit-line-contact-region;
• and
• wherein the conductive interconnect of the digit line further penetrates through the additional opening.

An integrated assembly comprising:

• a plurality of access transistors, each of the plurality of access transistor including a digit-line-contact-region;
• non-conductive material over the plurality of access transistors, the non-conductive material comprising insulative material and non-conductive-semiconductor-material over the insulative material, the non-conductive material including a plurality of openings to expose at least one part of the digit-line-contact-region of an associated one of the plurality of access transistors;
• a plurality of conductive-semiconductor-material-interconnects each in an associated one of the plurality of openings to make an electrical contact with the at least one part of the digit-line-contact-region of an associated one of the plurality of access transistors, each of the plurality of conductive-semiconductor-material-interconnects being recessed to leave a part of an associated one of the plurality of openings so that each of the plurality of conductive-semiconductor-material-interconnects is free from being contact with the non-conductive-semiconductor-material;
• and
• at least one digit line over the non-conductive material, the at least one digit line including a plurality of conductive interconnects each protruded downwardly to fill the part of an associated one of the plurality of openings.