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US 2020/0026517 A1Published application
Surface devices within a vertical power device
AssigneeD3 Semiconductor LLC
InventorsThomas E. Harrington, III, Zhijun Qu
Life of this patent
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Abstract
A semiconductor device comprises a vertical power device, such as a superjunction MOSFET, an IGBT, a diode, and the like, and a surface device that comprises one or more lateral devices that are electrically active along a top surface of the semiconductor device.
Claims21
A semiconductor device comprising:
- a surface device;
- a first vertical power device that is controlled by the surface device;
- and,
- an insulator separating the surface device and the vertical power device.
1 more element
(canceled)
A semiconductor device comprising:
- a surface device;
- and,
- a vertical power device insulated from and controlled by the surface device.
A semiconductor device comprising:
- a surface device;
- a vertical power device;
- and,
- wherein the vertical power device is controlled by the surface device.
1 more element
Dependencies are inferred from the claim text.