Flash memory controller, flash memory module and associated electronic device
AssigneeSilicon Motion, Inc.
InventorTsung-Chieh Yang
Life of this patent
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Abstract
The present invention provides a method for accessing a flash memory module, wherein the flash memory module comprises at least one flash memory chip, each flash memory chip comprises a plurality of blocks, each block comprises a plurality of pages, and the method includes the steps of: sending a read command to the flash memory module to ask for data on at least one memory unit; receiving multi-bit information of a plurality of memory cells of the at least one memory unit from the flash memory module; and analyzing the multi-bit information of the plurality of memory cells to obtain a threshold voltage distribution of the plurality of memory cells for determining a decoding process.
Claims16
A flash memory controller, wherein the flash memory controller is coupled to a flash memory module, the flash memory module comprises at least one flash memory chip, each flash memory chip comprises a plurality of blocks, each block comprises a plurality of pages, and the flash memory controller comprising:
- a memory, for storing a program code;
- and
- a microprocessor, for executing the program code to access the flash memory module via a control logic circuit;
- wherein after the microprocessor sends a read command to the flash memory module to ask for data on at least one memory unit, the control logic circuit receives multi-bit information of a plurality of memory cells of the at least one memory unit from the flash memory module, and the control logic circuit analyzes the multi-bit information of the plurality of memory cells to obtain a threshold voltage distribution of the plurality of memory cells for determining a decoding process.
A method for accessing a flash memory module, wherein the flash memory module comprises at least one flash memory chip, each flash memory chip comprises a plurality of blocks, each block comprises a plurality of pages, and the method comprises:
- sending a read command to the flash memory module to ask for data on at least one memory unit;
- receiving multi-bit information of a plurality of memory cells of the at least one memory unit from the flash memory module;
- analyzing the multi-bit information of the plurality of memory cells to obtain a threshold voltage distribution of the plurality of memory cells for determining a decoding process.
Dependencies are inferred from the claim text.