Proximity exposure method
AssigneeV Technology Co., Ltd.
InventorsTakumi TOGASHI, Tomonori HARADA
Life of this patent
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Abstract
A proximity exposure method, wherein a mask (M) of which the master patterns (31) are formed larger than the resolution limit of the resist (R) is prepared with respect to the resist patterns (43) having the minimum pitch (P) equal to or smaller than the resolution limit of the resist (R); in the first exposure step, the mask (M) and the workpiece (W) are relatively step-moved by the pitch (P) of the resist patterns (43) after the mask patterns (31) are exposed and transferred onto the workpiece (W); and in the second exposure step, the mask patterns (31) are exposed and transferred onto the workpiece (W) again.
Claims4
A proximity exposure method of arranging a mask and a workpiece opposing each other with a predetermined gap therebetween and irradiating the workpiece with light for pattern exposure through the mask to expose and transfer mask patterns of the mask to a resist on the workpiece, the proximity exposure method comprising:
- a mask preparation step of preparing the mask of which the mask patterns are formed at a pitch larger than a resolution limit of the resist with respect to resist patterns having a minimum pitch equal to or smaller than the resolution limit of the resist;
- a first exposure step of exposing and transferring the mask patterns onto the workpiece;
- a movement step of relatively step-moving the mask and the workpiece by the minimum pitch of the resist patterns;
- and
- a second exposure step of exposing and transferring the mask patterns onto the workpiece again after the movement step.
Dependencies are inferred from the claim text.