Wiring substrate and display device including wiring substrate
AssigneeSamsung Display Co., Ltd.
InventorsJu Hyun LEE, Gyung Min BAEK, Hyun Eok SHIN, Hong Sick PARK, Sang Won SHIN
Life of this patent
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Abstract
A display device may include a first base, a metal oxide layer overlapping a face of the first base, and a conductive metal layer directly contacting the metal oxide layer. The metal oxide layer may include molybdenum oxide. A side of the metal oxide layer may be oriented at a first angle relative to the face of the first base. A side of the conductive metal layer may be oriented at a second angle relative to the face of the first base. A size of the second angle may be in a range of 30° to 75°.
Claims20
A display device, comprising:
- a first base;
- a metal oxide layer overlapping a face of the first base;
- and
- a conductive metal layer directly contacting the metal oxide layer,
- wherein the metal oxide layer includes molybdenum oxide,
- wherein a side of the metal oxide layer is oriented at a first angle relative to the face of the first base,
- wherein a side of the conductive metal layer is oriented at a second angle relative to the face of the first base, and
- wherein a size of the second angle is in a range of 30° to 75°.
A wiring substrate, comprising:
- a first base;
- a metal oxide layer overlapping a face of the first base;
- and
- a conductive metal layer directly contacting the metal oxide layer,
- wherein the metal oxide layer includes molybdenum oxide,
- wherein a side of the conductive metal layer is oriented at an angle relative to the face of the first base, and
- wherein a size of the angle is in a range of 30° to 75°.
A display device, comprising:
- a first base;
- a conductive metal layer overlapping a face of the first base;
- and
- a metal oxide layer directly contacting the conductive metal layer,
- wherein the metal oxide layer includes MoxTayOz,
- wherein a side of the conductive metal layer is oriented at an acute angle relative to the face of the first base, and
- wherein a content of tantalum in metal atoms is in a range of 0.5 at % to 20 at % in the metal oxide layer.
Dependencies are inferred from the claim text.