Photonic transmitter

A photonic transmitter, comprising:

• a stack comprising a substrate and the following layers successively stacked one on top of the other and each mainly lying parallel to a plane of the substrate:
• a first layer disposed directly on the substrate and comprising single-crystal silicon encapsulated in a dielectric material,
• a second layer disposed directly on the first layer and comprising a dielectric material, and
• a third layer disposed directly on the second layer and comprising a III-V gain material and a doped III-V crystalline material, wherein the III-V gain material and the doped III-V crystalline material are encapsulated in a dielectric material;
• a semiconductor laser source configured to generate an optical signal, the semiconductor laser source comprising:
• a first waveguide made of silicon structured in the single-crystal silicon of the first layer, and
• a second waveguide made of III-V gain material structured in the III-V gain material of the third layer, the first and second waveguides being optically coupled to each other by adiabatic coupling and being separated from each other by a first segment of the second layer, wherein in an interior of the first segment of the second layer, a thickness of the dielectric material is equal to a thickness of the second layer;
• and
• a phase modulator produced on the substrate and configured to modulate an optical signal generated by the semiconductor laser source, the phase modulator comprising:
• a first electrode made of n-doped or p-doped single-crystal silicon, a first portion of which is structured in the single-crystal silicon of the first layer, and
• a second electrode made of doped III-V crystalline material structured in the doped III-V crystalline material of the third layer, a dopant of the second electrode being of opposite type to that of the first electrode, the second electrode being separated from the first electrode by a second segment of the second layer,
• wherein:
• the thickness of the second layer is comprised between 40 nm and 1 μm, and in an interior of the second segment of the second layer, a thickness of the dielectric material is comprised between 5 nm and 35 nm, a rest of the thickness of the second layer in the interior of the second segment being formed by a thickness of semiconductor material directly disposed on the first portion of the first electrode and which forms a second portion of the first electrode, the thickness of semiconductor material being chosen from the group consisting of a thickness of silicon, a thickness of a SiGe alloy, and a superposition of thicknesses made of silicon and made of the SiGe alloy.