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US 2020/0026003 A1Published application
Integrated photonics including germanium
AssigneeThe Research Foundation for The State University of New York
InventorsDouglas Coolbaugh, Thomas Adam, Gerald L. Leake
Life of this patent
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Abstract
A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.
Claims20
A method of fabricating a photodetector structure comprising:
- forming dielectric material over a silicon waveguide;
- etching a trench in the dielectric material extending to the silicon waveguide;
- epitaxially growing germanium within the trench;
- annealing germanium formed by the epitaxially growing;
- repeating the epitaxially growing and the annealing;
- depositing metal within a second trench, the second trench having a bottom defined by the silicon waveguide and a sidewall defined by the dielectric material;
- performing silicide formation annealing so that the metal reacts with the silicon to form a silicide formation at a bottom of the trench;
- and
- performing transformation stage annealing so that the silicide formation is transformed into a low resistivity phase.
6 more elements
A photonic structure comprising:
- dielectric material formed over a silicon waveguide;
- a trench formed in the dielectric material extending to the silicon waveguide;
- a germanium formation formed in the trench, the germanium formation adapted to receive light transmitted by the silicon waveguide;
- and
- a top doping region formed in an area of the germanium formation so that the top doping region is spaced from the trench by a spacing distance equal to or greater than a threshold distance.
2 more elements
A method comprising:
- forming a photodetector having a bottom and top contact;
- forming a dielectric layer defining a trench, the trench having an elevation above an elevation of the top contact;
- and
- forming an aluminum metallization layer within the trench, the aluminum metallization layer being in electrical communication with the top contact.
1 more element
Dependencies are inferred from the claim text.