Solid-state imaging device, production method, and electronic apparatus

Abstract

The present technology relates to a solid-state imaging device, a production method, and an electronic apparatus that can prevent sensitivity unevenness from generating. The solid-state imaging device includes a pixel array unit having a plurality of pixels, a microlens formed by laminating a plurality of lens layers for the every pixel, and a film formed between the lens layers with a uniform film thickness having a refractive index lower than a refractive index of the lens layer. The present technology is applicable to an amplification type solid-state imaging device such as a surface irradiation type or rear irradiation type CMOS image sensor, and a charge transfer type solid-state imaging device such as a CCD image sensor.

Dependencies are inferred from the claim text.