Complementary metal-oxide-semiconductor depth sensor element

A depth sensor element comprising:

• a substrate comprising a photosensitive region;
• a semiconductor region formed on the substrate;
• a photogate formed on the semiconductor region, corresponding to the photosensitive region and having a first side and a second side;
• a first transfer gate formed on the semiconductor region and having
• a first side;
• and
• a second side adjacent to the first side of the photogate;
• a first gap formed between the second side of the first transfer gate and the first side of the photogate;
• a second transfer gate formed on the semiconductor region and having
• a first side adjacent to the second side of the photogate;
• and
• a second side;
• a second gap formed between the first side of the second transfer gate and the second side of the photogate;
• a lightly doped region formed on the semiconductor region, corresponding to the photosensitive region and being below the first and second transfer gates;
• a first floating doped region formed in the lightly doped region, connected to the first side of the first transfer gate and being as a first transmitting node;
• and
• a second floating doped region formed in the lightly doped region, connected to the second side of the second transfer gate and being as a second transmitting node;
• wherein the photogate, the first transfer gate, and the second transfer gate commonly connect to the same lightly doped region, and a polarity of dopants of the lightly doped region is the same with a polarities of dopants of the first and second floating doped regions, and the polarity of dopants of the lightly doped region is different to a polarity of dopants of the semiconductor region.