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US 2020/0013758 A1Published application
Semiconductor device and manufacturing method thereof
OwnerMakoto SHIZUKUISHIinventor
Life of this patent
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Abstract
A semiconductor device includes n semiconductor chips stacked via electrical contacting means in the silicon substrate thickness direction, n being an integer larger than 2, a side face of the stacked semiconductor device in the substrate thickness direction being covered by a non-conductive layer. The shape of the side face with respect to a plan view of the stacked semiconductor device may be one of curved, convex, concave or circular.
Claims19
A semiconductor device comprising:
- a stacked structure including a plurality of semiconductor chips stacked successively in a first direction that is parallel to a Z-axis,
- each of the plurality of semiconductor chips including,
- a plurality of circuit blocks,
- a top surface that is parallel to an X-Y plane defined by an X-axis and a Y-axis,
- a bottom surface that is opposite the top surface and parallel to the X-Y plane,
- one or more outer side surfaces that are parallel to the Z-axis, and
- one or more inner side surfaces that are parallel to the Z-axis,
- the one or more inner side surfaces of each of the plurality of semiconductor chips defining an inner sidewall of the stacked structure,
- the inner sidewall defining a hollow that,
- extends through the stacked structure in a direction parallel to the Z-axis, and
- is between at least two circuit blocks from among the plurality of circuit blocks of at least one semiconductor chip from among the plurality of semiconductor chips.
8 more elements
A semiconductor device comprising:
- a stacked structure including a plurality of semiconductor chips stacked successively in a first direction that is parallel to a Z-axis,
- each chip, from among the plurality of semiconductor chips, including,
- a plurality of electrical contacts located at central portion of the chip,
- a top surface that is parallel to an X-Y plane defined by an X-axis and a Y-axis,
- a bottom surface that is opposite the top surface and parallel to the X-Y plane,
- one or more outer side surfaces that are parallel to the Z-axis, and
- one or more inner side surfaces that are parallel to the Z-axis,
- the one or more outer side surfaces of each of the plurality of semiconductor chips defining an outer sidewall of the stacked structure such that a shape of the outer sidewall of the stacked structure with respect to the X-Y plane is circular.
5 more elements
A semiconductor device manufacturing method comprising:
- forming circuits on a first plurality of semiconductor chips included in a first semiconductor wafer;
- etching at least one sidewall on at least one semiconductor chip from among the first plurality of semiconductor chips;
- and
- after the etching,
- dividing the first plurality of semiconductor chips of the first semiconductor wafer by performing a dicing operation on the first semiconductor wafer,
- wherein the at least one sidewall of the at least one semiconductor chip is,
- an outer sidewall that defines a curved face of the at least one semiconductor chip, or
- an inner sidewall that defines a hollow within the at least one semiconductor chip.
5 more elements
Dependencies are inferred from the claim text.