Euv light source and apparatus for lithography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Shuo SU, Chun-Lin CHANG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG
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Abstract
An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.
Claims20
An extreme ultra violet (EUV) radiation source apparatus, comprising:
- a collector mirror;
- a target droplet generator for generating a tin (Sn) droplet;
- a rotatable debris collection device;
- one or more coils for generating an inductively coupled plasma (ICP);
- a gas inlet for providing a source gas for the ICP;
- and
- a chamber enclosing at least the collector mirror and the rotatable debris collection device,
- wherein the gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.
An extreme ultra violet (EUV) radiation source apparatus, comprising:
- a collector mirror;
- a target droplet generator for generating a tin (Sn) droplet;
- a rotatable debris collection device;
- one or more coils for generating an inductively coupled plasma (ICP);
- a gas inlet for providing a source gas including one or more of a Si containing gas and a Zr containing gas, for the ICP;
- and
- a chamber enclosing at least the collector mirror and the rotatable debris collection device.
A method of cleaning parts in a chamber of an EUV radiation source, the method comprising:
- supplying a Cl containing gas into the chamber;
- and
- generating inductively coupled plasma (ICP) by supplying AC power to coils disposed inside the chamber, thereby removing tin debris by forming SnCl4,
- wherein the ICP is generated such that the ICP does not cause damage to a collector mirror.
Dependencies are inferred from the claim text.