Digital-to-analog converters having multiple-gate transistor-like structure

An integrated circuit comprising:

• a body including semiconductor material;
• a source region and a drain region, the source and drain regions adjacent the body, the source and drain regions including semiconductor material;
• a first gate structure at least above the body, the first gate structure including a first gate electrode and a first gate dielectric, the first gate dielectric between the first gate electrode and the body, the first gate electrode having a width and including one or more metals, the first gate dielectric including one or more dielectrics;
• and
• a second gate structure at least above the body, the second gate structure including a second gate electrode and a second gate dielectric, the second gate dielectric between the second gate electrode and the body, the second gate electrode having a width and including one or more metals, the second gate dielectric including one or more dielectrics, wherein the second gate electrode width is within 3 nanometers (nm) of double the first gate electrode width.

A method of forming an integrated circuit, the method comprising:

• providing a body including semiconductor material;
• forming a source region and a drain region, the body between the source and drain regions, the source and drain regions including semiconductor material and dopant;
• forming a first gate electrode at least above the body, the first gate electrode including one or more metals;
• and
• forming a second gate electrode at least above the body, the second gate electrode including one or more metals, the second gate electrode distinct from the first gate electrode, the second gate electrode within 20 nanometers (nm) of the first gate electrode.