Acoustic wave device, multiplexer, high-frequency front-end circuit, and communication apparatus
AssigneeMurata Manufacturing Co., Ltd.
InventorsRyo NAKAGAWA, Hideki IWAMOTO, Tsutomu TAKAI
Life of this patent
Estimating the term…
Loading patent…
AssigneeMurata Manufacturing Co., Ltd.
InventorsRyo NAKAGAWA, Hideki IWAMOTO, Tsutomu TAKAI
Estimating the term…
An acoustic wave device includes a silicon oxide film, a piezoelectric body made of lithium tantalate, and interdigital transducer electrodes stacked on a supporting substrate made of silicon, in which the values of the wave length-normalized film thickness and the Euler angle of the piezoelectric body made of lithium tantalate, the wave length-normalized film thickness of the silicon oxide film, the wave length-normalized film thickness of the interdigital transducer electrodes in terms of aluminum thickness, the propagation direction of the supporting substrate, and the wave length-normalized film thickness of the supporting substrate are set such that represented by Formula (1) for at least one of responses of first, second, and third higher-order modes is more than about −2.4, and TSi>20.
An acoustic wave device, comprising:
Dependencies are inferred from the claim text.