Surface emitting quantum cascade laser
AssigneeKabushiki Kaisha Toshiba
InventorsShinji SAITO, Tsutomu KAKUNO, Rei HASHIMOTO, Kei KANEKO, Yasunobu KAI
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AssigneeKabushiki Kaisha Toshiba
InventorsShinji SAITO, Tsutomu KAKUNO, Rei HASHIMOTO, Kei KANEKO, Yasunobu KAI
Estimating the term…
A surface emitting quantum cascade laser includes an active layer and a first semiconductor layer. The active layer includes a plurality of quantum well layers and is capable of emitting laser light by intersubband transition. The first surface includes an internal region and an outer peripheral region. Grating pitch of the first pits is m times grating pitch of the second pits. The outer peripheral region surrounds the internal region. A first planar shape of an opening end of the first pit is asymmetric with respect to a line passing through barycenter of the first planar shape and is parallel to at least one side of the first two-dimensional grating. A second planar shape of an opening end of the second pit is symmetric with respect to each of lines passing through barycenter of the second planar shape and is parallel to either side of the second two-dimensional grating.
A surface emitting quantum cascade laser comprising:
The laser according to clai herein a current is not injected into the internal region.
A surface emitting quantum cascade laser comprising:
The laser according to claim3, wherein an injection current of the internal region is lower than an injection current of the outer peripheral region.
Dependencies are inferred from the claim text.