ReRAM STRUCTURE FORMED BY A SINGLE PROCESS
AssigneeInternational Business Machines Corporation
InventorsAlexander Reznicek, Oscar van der Straten, Adra Carr, Praneet Adusumilli
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Abstract
A method of forming a resistive random access memory device which contains uniform layer composition is provided. The method enables the in-situ deposition of a bottom electrode layer (i.e., a metal layer), a resistive switching element (i.e., at least one metal oxide layer), and a top electrode layer (i.e., a metal nitride layer and/or a metal layer) with compositional control. Resistive random access memory devices which contain uniform layer composition enabled by the in-situ deposition of the bottom electrode layer, the resistive switching element, and the top electrode layer provide significant benefits for advanced memory technologies.
Claims20
A method of forming a resistive random access memory device, the method comprising:
- forming, in a reactor chamber and under vacuum, a bottom electrode layer composed of a metal selected from tungsten (W) and molybdenum (Mo) on a surface of a substrate by first sputtering the metal from a target in a first sputtering atmosphere composed entirely of an inert gas;
- forming, without breaking the vacuum, a resistive switching element composed of an oxide of the metal on a surface of the bottom electrode layer by second sputtering the metal from the target in a second sputtering atmosphere composed of the inert gas and oxygen;
- and
- forming, without breaking the vacuum, a first top electrode layer composed of a nitride of the metal on a surface of the resistive switching element by third sputtering the metal from the target in a third sputtering atmosphere composed of the inert gas and nitrogen.
Dependencies are inferred from the claim text.