ReRAM STRUCTURE FORMED BY A SINGLE PROCESS
AssigneeInternational Business Machines Corporation
InventorsAlexander Reznicek, Oscar van der Straten, Adra Carr, Praneet Adusumilli
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Abstract
A method of forming a resistive random access memory device which contains uniform layer composition is provided. The method enables the in-situ deposition of a bottom electrode layer (i.e., a metal layer), a resistive switching element (i.e., at least one metal oxide layer), and a top electrode layer (i.e., a metal nitride layer and/or a metal layer) with compositional control. Resistive random access memory devices which contain uniform layer composition enabled by the in-situ deposition of the bottom electrode layer, the resistive switching element, and the top electrode layer provide significant benefits for advanced memory technologies.
Claims20
A resistive random access memory (ReRAM) device comprising:
- a bottom electrode layer composed of a metal selected from tungsten (W) and molybdenum (Mo) located on a surface of a substrate;
- a resistive switching element composed of an oxide of the metal located on a surface of the bottom electrode layer;
- and
- a top electrode layer composed of nitride of the metal or the metal located on a surface of resistive switching element, wherein an interface between the bottom electrode layer and the resistive switch element and an interface between the top electrode layer and the resistive switching element are sharp.
Dependencies are inferred from the claim text.