Phase change memory with gradual resistance change
AssigneeInternational Business Machines Corporation
InventorKangguo Cheng
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Abstract
A phase change memory cell is provided that includes a phase change material-containing structure sandwiched between first and second electrodes. The phase change material-containing structure has a resistance that changes gradually, and thus may be used in analog or neuromorphic computing. The phase change material-containing structure may contain a plurality of phase change material pillars, wherein each phase change material pillar has a different phase change material composition. Alternatively, the phase change material-containing structure may contain a doped phase change material layer in which a dopant concentration decreases laterally inward from an outermost surface thereof.
Claims18
A semiconductor structure comprising:
- a phase change memory cell located on a surface of a semiconductor substrate, wherein the phase change memory cell comprises a material stack of, and from bottom to top, a first electrode, a phase change material-containing structure having a resistance that changes gradually, and laterally inward, from an outermost surface, and a second electrode, wherein the phase change material-containing structure comprises a doped phase change material layer in which a dopant concentration of the doped phase change material layer decreases laterally inward from an outermost surface of the doped phase change material layer.
Dependencies are inferred from the claim text.