Method of manufacturing magnetic tunnel junction and magnetic tunnel junction

A method of manufacturing a magnetic tunnel junction, comprising:

• a first step of etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching without using an oxidizing gas or by ion beam etching to form the magnetic tunnel junction;
• an oxidation step of oxidizing side walls of the magnetic tunnel junction;
• a second step of simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas whose valence of a corresponding metal element is m, to form a first protective film on the side walls of the magnetic tunnel junction;
• and
• a third step of forming, by a plasma CVD method, a second protective film on the magnetic tunnel junction on which the first protective film is formed, wherein
• in the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.

A method of manufacturing a magnetic tunnel junction, comprising:

• a first step of forming the magnetic tunnel junction in which a first magnetic layer, a MgO barrier layer, and a second magnetic layer are stacked in order and a magnetic oxide layer is formed on side walls of the first magnetic layer and the second magnetic layer;
• a second step of introducing an organic acid gas which is an n-valent acid, reacting the organic acid gas with the magnetic oxide layer to produce a volatile metal complex and H2O, and removing the magnetic oxide layer by volatilization;
• and
• a third step of introducing a precursor gas having a corresponding metal element valence of m and reacting the precursor gas with H2O to form an oxide film corresponding to the precursor gas as a first protective film, wherein
• the second step and the third step are repeated.