Integration of top spin orbit electrode in magnetic random access memory devices using atomic later etching

Abstract

Embodiments herein relate to manufacturing a magnetic random access memory (MRAM). In particular, a process may include coupling a side of a magnetic free layer of a magnetic tunnel junction (MTJ) to a first side of a hybrid spin orbit torque (SOT) electrode-insert layer, coupling a first side of an atomic layer etching (ALE) etch layer to a second side of the hybrid SOT electrode-insert layer opposite the first side, applying an interlayer dielectric (ILD) layer to edges of the MTJ, the SOT electrode and the etch layers, the ILD layer in a plane substantially perpendicular to a plane of the MTJ, SOT electrode and ALE etch layers, and etching the ALE etch layer using ALE until the SOT layer is exposed.

Dependencies are inferred from the claim text.