Magnetic field assisted mram structures, integrated circuits, and methods for fabricating the same
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsChenchen Jacob Wang, Michael Nicolas Albert Tran, Dimitri Houssameddine, Eng Huat Toh
Life of this patent
Estimating the term…
Abstract
Magnetic field assisted magnetoresistive random access memory (MRAM) structures, integrated circuits including MRAM structures, and methods for fabricating integrated circuits including MRAM structures are provided. An exemplary integrated circuit includes a magnetoresistive random access memory (MRAM) structure and a magnetic field assist structure to generate a selected net magnetic field on the MRAM structure.
Claims21
An integrated circuit device comprising:
- a magnetoresistive random access memory (MRAM) structure, wherein the MRAM structure includes a first sidewall and an opposite second sidewall;
- and
- a magnetic structure to generate a selected net magnetic field on the MRAM structure, wherein the magnetic structure includes a first structure segment adjacent and parallel to the first sidewall and a second structure segment adjacent and parallel to the second sidewall.
10-14. (canceled)
A magnetic field assisted magnetoresistive random access memory (MRAM) structure comprising:
- a magnetic tunnel junction stack having a first stack sidewall and an opposite second stack sidewall and including a magnetic pinned layer, a magnetic free layer, and a barrier layer disposed between the magnetic pinned layer and the magnetic free layer;
- and
- a first passivation layer directly on the first stack sidewall;
- a second passivation layer directly on the second stack sidewall;
- a magnetic field assist structure to generate a selected net magnetic field on the magnetic free layer, wherein the magnetic field assist structure includes a first segment directly on the first passivation layer and a second segment directly on the second passivation layer.
17-20. (canceled)
Dependencies are inferred from the claim text.