Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device
AssigneesNational University Corporation Nagoya University, Osaka University, Nichia Corporation
InventorsTsukasa TORIMOTO, Tatsuya KAMEYAMA, Marino KISHI, Chie MIYAMAE, Susumu KUWABATA, Taro UEMATSU, Daisuke OYAMATSU, Kenta NIKI
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Abstract
Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.
Claims19
-16. (canceled)
Semiconductor nanoparticles, comprising:
- Ag, In, Ga, and S,
- wherein a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less,
- wherein the semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and
- wherein the semiconductor nanoparticles have an average particle diameter of 10 nm or less.
A method of producing semiconductor nanoparticles, the method comprising:
- preparing a mixture containing silver acetate, indium acetylacetonate, gallium acetylacetonate, a sulfur source, and an organic solvent;
- and
- heat-treating the mixture.
Dependencies are inferred from the claim text.