Group iii nitride semiconductor light-emitting element and method of manufacturing same

A group III nitride semiconductor light-emitting element comprising, in the following order:

• an n-type group III nitride semiconductor layer;
• a group III nitride semiconductor laminated body obtained by alternately laminating a barrier layer and a well layer narrower in bandgap than the barrier layer in the stated order so that the number of barrier layers and the number of well layers are both N, where N is an integer;
• an AlN guide layer;
• and
• a p-type group III nitride semiconductor layer,
• wherein the AlN guide layer has a thickness of 0.7 nm or more and 1.7 nm or less, and
• wherein an Nth well layer in the group III nitride semiconductor laminated body and the AlN guide layer are in contact with each other, or
• a final barrier layer wider in bandgap than the well layer and narrower in bandgap than the AlN guide layer is further provided between the Nth well layer in the group III nitride semiconductor laminated body and the AlN guide layer, the final barrier layer having a thickness of 1.5 nm or less,
• wherein the p-type group III nitride semiconductor layer includes a first p-type group III nitride semiconductor layer and a second p-type group III nitride semiconductor layer in the stated order,
• the first p-type group III nitride semiconductor layer is narrower in bandgap than the AlN guide layer, and wider in bandgap than the barrier layer,
• the second p-type group III nitride semiconductor layer is narrower in bandgap than the first p-type group III nitride semiconductor layer, and
• wherein the first p-type group III nitride semiconductor layer and the second p-type group III nitride semiconductor layer are in contact with each other, and the second p-type group III nitride semiconductor layer is composed only of a p-type contact layer.