Vertical topology light emitting device

A vertical topology light emitting device, comprising:

• a conductive support structure;
• an adhesion layer disposed on the conductive support structure;
• a p-type contact disposed on the adhesion layer;
• a GaN-based semiconductor structure disposed on the p-type contact, wherein the GaN-based semiconductor structure comprises an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, wherein the n-type GaN-based layer has an etched flat surface, and wherein the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface;
• an interface layer on the GaN-based semiconductor structure;
• and
• a contact pad disposed on the interface layer,
• wherein the interface layer comprises a portion which directly contacts the etched flat surface of the n-type GaN-based layer,
• wherein a first thickness of the conductive support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure,
• wherein a second thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers, and
• wherein the second thickness of the GaN-based semiconductor structure is less than 1/20 thick of the first thickness of the conductive support structure.

A vertical topology light emitting device, comprising:

• a conductive support structure comprising Cu;
• an adhesion layer disposed on the conductive support structure;
• a p-type contact disposed on the adhesion layer;
• a GaN-based semiconductor structure disposed on the p-type contact, wherein the GaN-based semiconductor structure comprises an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, wherein the n-type GaN-based layer has an etched flat surface, and wherein the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface;
• an interface layer on the GaN-based semiconductor structure comprising Al;
• and
• a contact pad disposed on the interface layer,
• wherein the interface layer comprises a portion which directly contacts the etched flat surface of the n-type GaN-based layer,
• wherein a first thickness of the conductive support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure,
• wherein a second thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers,
• wherein the second thickness of the GaN-based semiconductor structure is less than 1/20 thick of the first thickness of the conductive support structure, and
• wherein the p-type contact includes a reflective contact.