Semiconductor Body

A semiconductor body comprising:

• a p-doped region;
• an active region;
• an intermediate layer;
• and
• a layer stack containing indium,
• wherein an indium concentration in the layer stack changes along a stacking direction,
• wherein the layer stack is formed with exactly one nitride compound semiconductor material apart from dopants,
• wherein the intermediate layer is nominally free of indium, arranged between the layer stack and the active region, and directly adjoins the layer stack,
• wherein the intermediate layer and/or the layer stack are n-doped at least in places,
• wherein a dopant concentration of the layer stack is at least 5*1017 1/cm3 and at most 2*1018 1/cm3, and
• wherein a dopant concentration of the intermediate layer is at least 2*1018 1/cm3 and at most 3*1019 1/cm3.

A semiconductor body comprising:

• a p-doped region;
• an active region;
• an intermediate layer;
• and
• a layer stack containing indium,
• wherein an indium concentration in the layer stack changes along a stacking direction,
• wherein the layer stack is formed with exactly one nitride compound semiconductor material apart from dopants,
• wherein the intermediate layer is nominally free of indium, arranged between the layer stack and the active region, and directly adjoins the layer stack,
• wherein the intermediate layer and/or the layer stack are n-doped at least in places, and
• wherein an indium concentration in a second region of the layer stack increases at least to a threshold value in a direction of the intermediate layer and decreases below the threshold value again in the layer stack only within a first region.