Thin film transistors having u-shaped features

An integrated circuit structure, comprising:

• a gate electrode above a substrate, the gate electrode having a trench therein;
• a channel material layer over the gate electrode and in the trench, the channel material layer conformal with the trench;
• a first source or drain contact coupled to the channel material layer at a first end of the channel material layer outside of the trench;
• and
• a second source or drain contact coupled to the channel material layer at a second end of the channel material layer outside of the trench.

An integrated circuit structure, comprising:

• a gate electrode above a substrate, the gate electrode having a plurality of trenches therein, and the gate electrode having a first side opposite a second side;
• a channel material layer over the gate electrode, the channel material layer conformal with the plurality of trenches;
• an insulator structure on the channel material layer and in the plurality of trenches;
• a first source or drain region coupled to the channel material layer at the first side of the gate electrode;
• and
• a second source or drain region coupled to the channel material layer at the second side of the gate electrode.

An integrated circuit structure, comprising:

• a first source or drain contact above a substrate;
• an insulator structure on the first source or drain contact, the insulator structure having a trench therein, the trench exposing a portion of the first source or drain contact;
• a channel material layer over the insulator structure and in the trench on the portion of the first source or drain contact, the channel material layer conformal with the trench;
• a gate electrode surrounded by the channel material layer within the trench;
• and
• a second source or drain contact over the gate electrode and coupled to the channel material layer at first and second ends of the channel material layer outside of the trench.