Thin film transistor, method for manufacturing the thin film transistor, and display panel
AssigneesHkc Corporation Limited, Chongqing Hkc Optoelectronics Technology Co., Ltd.
InventorEntsung Cho
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Abstract
The present disclosure provides a thin film transistor, a manufacturing method thereof, and a display panel. The thin film transistor includes a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a doping layer, and a source drain electrode all formed on the substrate in sequence, the semiconductor layer absorbs light having a wavelength greater than 760 nanometers.
Claims19
A thin film transistor, comprising:
- a substrate;
- a gate electrode, a gate insulating layer, a semiconductor layer, a doping layer, and a source drain electrode all defined on the substrate in sequence, the semiconductor layer absorbing light having a wavelength greater than 760 nanometers.
A method for manufacturing a thin film transistor, wherein, the method comprises:
- providing a substrate;
- forming a gate electrode, a gate insulating layer, a semiconductor layer, a doping layer, and a source drain electrode on the substrate in sequence, wherein, the semiconductor layer absorbs light having a wavelength greater than 760 nanometers.
A display panel, wherein, the display panel comprises a thin film transistor array substrate which comprises a thin film transistor;
- the thin film transistor comprises:
- a substrate;
- a gate electrode, a gate insulating layer, a semiconductor layer, a doping layer, and a source drain electrode all defined on the substrate in sequence, the semiconductor layer absorbs light having a wavelength greater than 760 nanometers.
Dependencies are inferred from the claim text.