US 2020/0006573 A1 · DOUBLE GATED THIN FILM TRANSISTORS

Abstract

Double gated thin film transistors are described. In an example, an integrated circuit structure includes an insulator layer above a substrate. A first gate electrode is on the insulator layer, the first gate electrode having a non-planar feature. A first gate dielectric is on and conformal with the non-planar feature of the first gate electrode. A channel material layer is on and conformal with the first gate dielectric. A second gate dielectric is on and conformal with the channel material layer. A second gate electrode is on and conformal with the second gate dielectric. A first source or drain region is coupled to the channel material layer at a first side of the first gate dielectric. A second source or drain region is coupled to the channel material layer at a second side of the first gate dielectric.

Claims24

Dependent claims

An integrated circuit structure, comprising:

an insulator layer above a substrate;
a first gate electrode on the insulator layer, the first gate electrode having a non-planar feature;
a first gate dielectric on and conformal with the non-planar feature of the first gate electrode;
a channel material layer on and conformal with the first gate dielectric;
a second gate dielectric on and conformal with the channel material layer;
a second gate electrode on and conformal with the second gate dielectric;
a first source or drain region coupled to the channel material layer at a first side of the first gate dielectric;
and
a second source or drain region coupled to the channel material layer at a second side of the first gate dielectric.

6 more elements

Dependencies are inferred from the claim text.

Double gated thin film transistors

Life of this patent

Double gated thin film transistors

Life of this patent

Abstract

Claims24