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US 2020/0006571 A1Published application
Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor
AssigneeCanon Kabushiki Kaisha
InventorsRyo Hayashi, Masafumi Sano, Katsumi Abe, Hideya Kumomi, Kojiro Nishi
Life of this patent
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Abstract
A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.
Claims15
1-20. (canceled)
A display comprising:
- a substrate;
- a field-effect transistor disposed on the substrate, the field-effect transistor comprising a gate electrode, a gate insulating layer, a metal-oxide layer which includes In—Ga—Zn oxide or In—Ga—Zn—Mg oxide, and a source electrode and a drain electrode being laminated in this order;
- a layer provided on an opposite side of the metal oxide layer from the gate electrode, each of the gate electrode and the layer having a transmittance of 30% or less in any wavelength in a range of 400 to 500 nm;
- and
- a light-emitting device comprising a light-emitting layer and a pair of electrodes between which a part of the light-emitting layer is interposed, wherein
- one of the pair of electrodes is electrically connected to the field-effect transistor,
- the layer is provided between the light-emitting layer and the metal-oxide layer in such a manner that a part of the layer, a part of the light emitting layer and a part of the gate electrode overlap each other as viewed from a direction perpendicular to the substrate, and
- the layer is an insulating layer.
5 more elements
Dependencies are inferred from the claim text.