Display device
AssigneeJapan Display Inc.
InventorsYohei YAMAGUCHI, Isao SUZUMURA
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Abstract
The purpose of the present invention is to realize the TFT of the oxide semiconductor having a superior characteristics and high reliability during the product's life. The structure of the present invention is as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed on the first oxide semiconductor, the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a gate electrode is formed on the first aluminum film.
Claims18
A semiconductor device comprising:
- a substrate,
- a first TFT having a first oxide semiconductor,
- a first gate insulating film, formed on the first oxide semiconductor,
- wherein the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film,
- a first gate electrode is formed on the first aluminum film,
- wherein an interlayer insulating film is formed covering the first gate insulating film and the first gate electrode, defect density of the first silicon oxide film is less than defect density of the interlayer insulating film,
- the defect density of the first silicon oxide film is 1×1018 (spins/cm3) or less by ESR (Electron Spin Resonance) analysis.
A semiconductor device comprising:
- a substrate,
- a first TFT having a first oxide semiconductor,
- a first gate insulating film, formed on the first oxide semiconductor,
- wherein the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a first gate electrode is formed on the first aluminum film,
- wherein the first gate electrode is formed by a laminated film that a second oxide semiconductor is laminated by a metal, and
- wherein a thickness of the second oxide semiconductor is smaller than a thickness of the first oxide semiconductor.
A semiconductor device comprising:
- a substrate,
- a first TFT having a first oxide semiconductor,
- a first gate insulating film, formed on the first oxide semiconductor,
- wherein the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film,
- a first gate electrode is formed on the first aluminum film,
- wherein the substrate has a second TFT of a poly-silicon, a distance between the poly-silicon and the substrate is shorter than a distance between the first oxide semiconductor and the substrate.
Dependencies are inferred from the claim text.