FinFET Device and Method of Forming Same

A method comprising:

• patterning a substrate to form a strip, the strip comprising a first semiconductor material;
• forming an isolation region along a sidewall of the strip, an upper portion of the strip extending above a top surface of the isolation region;
• forming a dummy gate structure along sidewalls and along a first top surface of the upper portion of the strip;
• performing a first etching process on the strip to form a first recess in the strip adjacent to the dummy gate structure;
• forming a first dielectric material within the first recess;
• performing an anneal process on the first dielectric material, the first dielectric material providing a stress to the sidewalls of the first recess after the anneal process;
• removing the first dielectric material from the first recess;
• and
• epitaxially growing a source/drain region in the first recess.

A semiconductor device comprising:

• a first semiconductor fin over a substrate, the first semiconductor fin comprising a channel region and a recess adjacent the channel region;
• a gate stack overlying a channel region of the first semiconductor fin, wherein the channel region of the first semiconductor fin has a stress between about 2.5 GPa and about 4.0 GPa;
• and
• an epitaxial region disposed within the recess.