US 2020/0006555 A1 · THIN FILM TRANSISTORS WITH EPITAXIAL SOURCE/DRAIN AND DRAIN FIELD RELIEF

Abstract

A method for manufacturing a semiconductor device includes forming a semiconductor layer on an insulating layer, epitaxially growing a first layer on the semiconductor layer, wherein the first layer has a first doping concentration, epitaxially growing a second layer on the semiconductor layer, wherein the second layer has a second doping concentration higher than the first doping concentration, forming a gate dielectric over an active region of the semiconductor layer, forming a gate electrode on the gate dielectric, and forming a plurality of source/drain contacts to the second layer, wherein the first and second layers comprise crystalline hydrogenated silicon (c-Si:H).

Claims20

Dependent claims

A semiconductor device, comprising:

a semiconductor layer on an insulating layer;
a first doped layer on the semiconductor layer, wherein the first doped layer has a first doping concentration;
a second doped layer on the semiconductor layer, wherein the second doped layer has a second doping concentration higher than the first doping concentration;
a gate dielectric over an active region of the semiconductor layer;
a gate electrode on the gate dielectric;
and
one or more source/drain contacts to the second doped layer;
wherein the first doped layer comprises a lightly doped drain (LDD) region and the second doped layer comprises a source/drain region.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/559,090Filed 3 Sep 2019

Priority

6 Dec 2017

Published

2 Jan 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification22 codes

H10D 30/603
Having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs: having asymmetry in the channel direction, e.g. lateral…
C30B 23/025
Epitaxial-layer growth: characterised by the substrate
G02F 1/136277
Active matrix addressed cells: formed on a semiconductor substrate, e.g. of silicon
H10D 30/0314
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate

Family

Application15/833,120Division · filed 6 Dec 2017

Application16/217,701Continuation · filed 12 Dec 2018

Application16/559,090Continuation

Application16/217,701Division

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US 2019/0172947 A1Published application

US 2020/0006555 A1This patent

From the US filing history. Foreign family members aren’t listed.

Thin film transistors with epitaxial source/drain and drain field relief

Life of this patent

Thin film transistors with epitaxial source/drain and drain field relief

Life of this patent

Abstract

Claims20