US 2020/0006545 A1 · Source/Drain Structure

Abstract

Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Claims21

Dependent claims

A method for semiconductor processing, the method comprising:

forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium;
implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure;
implanting a second dopant into the amorphous region containing the first dopant;
and
heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

2 more elements

A method for semiconductor processing, the method comprising:

forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region having a first germanium concentration and a second region having a second germanium concentration, the first germanium concentration being greater than the second germanium concentration;
forming a dielectric layer over the active area;
forming an opening through the dielectric layer to expose at least a portion of an upper surface of the source/drain structure;
implanting a first dopant comprising gallium or germanium into the exposed source/drain structure;
after implanting the first dopant, implanting at least a second dopant comprising a p-type dopant into the exposed source/drain structure containing the first dopant;
subjecting the implanted source/drain structure containing the first dopant and at least the second dopant to a first anneal process, the first anneal process heating the implanted source/drain structure;
forming a silicide region at the upper surface of the exposed source/drain structure;
and
forming a conductive feature in the opening to the upper surface of the source/drain structure.

6 more elements

Dependencies are inferred from the claim text.

Source/Drain Structure

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Source/Drain Structure

Life of this patent

Abstract

Claims21