Semiconductor device including silicon carbide body and transistor cells

Abstract

A semiconductor device includes a silicon carbide body including a transistor cell region and an idle region. The transistor cell region includes transistor cells. The idle region is devoid of transistor cells. The idle region includes a transition region between the transistor cell region and a side surface of the silicon carbide body, a gate pad region, and a diode structure comprising at least one of a merged pin Schottky diode structure or a merged pin heterojunction diode structure in at least one of the transition region or the gate pad region.

Dependencies are inferred from the claim text.