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US 2020/0006541 A1Published application
Semiconductor structures with two-dimensional materials
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsShih-Yen Lin, Hsuan-An Chen
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Abstract
The current disclosure describes semiconductor devices, e.g., transistors, including a substrate, a semiconductor region including, at the surface, monolayer MoS2 and/or other monolayer material over the substrate, and a terminal structure over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.
Claims20
A method, comprising:
- receiving a wafer including a substrate and a first layer of a first two-dimensional material over the substrate;
- forming a first pattern of the first two-dimensional material by patterning the first layer;
- and
- selectively forming a second layer of a second two-dimensional material over the first pattern, the second layer of the second two-dimensional material substantially overlapping the first pattern.
1 more element
A method, comprising:
- receiving a wafer including a substrate and a first layer of a first two-dimensional material over the substrate;
- forming a first pattern of the first two-dimensional material by patterning the first layer of the first two-dimensional material, the first pattern of the first two-dimensional material exhibiting a semiconductor property;
- forming a second layer of a second two-dimensional material over the first pattern of the first two-dimensional material, the second layer of the second two-dimensional material having sidewalls that are coterminous with sidewalls of the first pattern;
- forming a conductive layer over the second layer of the second two-dimensional material;
- patterning the conductive layer and the second layer of the second two-dimensional material to form a source structure and a drain structure and an exposed portion of the first pattern between the source structure and the drain structure;
- and
- forming a gate structure over the exposed portion of the first pattern.
4 more elements
A structure, comprising:
- a substrate;
- a semiconductor body of a first two-dimensional material over the substrate, the semiconductor body having a first surface;
- a source/drain contact of a second two-dimensional material over the semiconductor body and on the first surface;
- and
- a gate structure over the semiconductor body, on the first surface, and adjacent to the source/drain contact.
2 more elements
Dependencies are inferred from the claim text.