Devices Having a Semiconductor Material That Is Semimetal in Bulk and Methods of Forming the Same

A method comprising:

• forming an isolation region in a substrate, wherein the isolation region extends above an upper surface of the substrate;
• epitaxially growing a first epitaxial layer adjacent a first sidewall of the isolation region, the first epitaxial layer being doped with a first dopant, the first dopant being a first type;
• epitaxially growing a second epitaxial layer over the first epitaxial layer, the second epitaxial layer being doped with a second dopant, the second dopant being a second type opposite the first type;
• epitaxially growing a third epitaxial layer adjacent a second sidewall of the isolation region, the second sidewall being opposite the first sidewall, the third epitaxial layer being doped with the second dopant;
• epitaxially growing a fourth epitaxial layer over the second epitaxial layer, the fourth epitaxial layer being doped with the first dopant;
• forming a conductive layer over the second epitaxial layer;
• forming a first opening through a first portion of the conductive layer to the second epitaxial layer;
• forming a second opening through a second portion of the conductive layer to the fourth epitaxial layer;
• forming a bismuth-containing material in the first opening and the second opening;
• and
• crystallizing the bismuth-containing material with an anneal.

A method comprising:

• forming an isolation region in a substrate between a first region and a second region of the substrate;
• recessing the substrate in the first region and the second region;
• epitaxially growing a first doped region in the first region;
• epitaxially growing a first highly doped source/drain contact region on the first doped region;
• epitaxially growing a second doped region in the second region;
• epitaxially growing a second highly doped source/drain contact region on the second doped region;
• forming a conductive layer over the first and second highly doped source/drain contact regions;
• forming a first opening through a first portion of the conductive layer to the first highly doped source/drain contact region and forming a second opening through a second portion of the conductive layer to the second highly doped source/drain contact region;
• forming a first gate dielectric along sidewalls of the first opening and forming a second gate dielectric along sidewalls of the second opening;
• forming a bismuth-containing material in the first opening and the second opening;
• and
• crystallizing the bismuth-containing material by annealing.