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US 2020/0006516 A1Published application
Antiferroelectric perovskite gate oxide for transistor applications
AssigneeIntel Corporation
InventorsSasikanth MANIPATRUNI, Uygar AVCI, Seiyon KIM, Ian YOUNG
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Abstract
An integrated circuit structure comprises a substrate. An antiferroelectric gate oxide is above the substrate, the antiferroelectric gate oxide comprising a perovskite material. A gate electrode is over at least a portion of the gate oxide.
Claims25
An integrated circuit structure, comprising:
- a substrate;
- an antiferroelectric gate oxide above the substrate, the antiferroelectric gate oxide comprising a perovskite material;
- and
- a gate electrode over at least a portion of the gate oxide.
1 more element
An integrated circuit structure, comprising:
- a substrate;
- a gate oxide above the substrate, the gate oxide comprising an antiferroelectric perovskite material;
- a gate electrode over at least a portion of the gate oxide;
- and
- a source region on one side of the gate electrode and a drain region on an opposite side of the gate electrode.
2 more elements
A method of fabricating an integrated circuit structure, the method comprising:
- forming a substrate;
- forming a gate oxide above the substrate, the gate oxide comprising an antiferroelectric perovskite material;
- and
- forming a gate electrode over at least a portion of the gate oxide.
1 more element
Dependencies are inferred from the claim text.