Transistor with inner-gate spacer

An integrated circuit including at least one transistor, the integrated circuit comprising:

• a body including semiconductor material;
• a gate electrode at least above the body and having a first maximum height, the gate electrode including one or more metals;
• a gate dielectric between the body and the gate electrode;
• a first spacer and a second spacer, the first spacer and the second spacer having a second maximum height equal to or greater than the first maximum height, the first spacer and the second spacer including one or more dielectric materials, the gate electrode between the first and second spacers;
• a first additional spacer between the first spacer and the gate electrode, the first additional spacer having a third maximum height less than the first maximum height;
• and
• a second additional spacer between the second spacer and the gate electrode, the second additional spacer having a fourth maximum height less than the first maximum height.

An integrated circuit structure comprising:

• a body including semiconductor material;
• a source region and a drain region, the body between the source region and the drain region, the source region and the drain region including semiconductor material and dopant;
• a first spacer including a dielectric material;
• a second spacer including the dielectric material;
• an additional spacer laterally adjacent to one of the first spacer or the second spacer;
• a gate electrode at least above the body, the gate electrode having a first portion and a second portion, the first portion wider than the second portion, the gate electrode at least partially between the additional spacer and one of the first spacer or the second spacer;
• and
• a gate dielectric between the body and the gate electrode.