Semiconductor Device and Method of Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Ming Chang, Chi-Wen Liu, Cheng-Chien Li, Hsin-Chieh Huang
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Abstract
A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a semiconductor fin on a substrate, the semiconductor fin comprising a first material;
- and
- forming a gate structure over the semiconductor fin;
- implanting to form a doped layer within the semiconductor fin;
- and
- growing a second material different from the first material within the semiconductor fin, wherein after the growing the second material the second material comprises a first portion and a second portion extending in a direction downwards from a surface of the semiconductor fin towards the substrate, the second portion having a germanium concentration gradient opposite the first portion and the doped layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a semiconductor fin over a substrate;
- removing a portion of the semiconductor fin to form a rounded opening;
- and
- growing a material within the rounded opening of the semiconductor fin, wherein the growing the material further comprises:
- growing a first portion of the material with first reactants, wherein after the growing the first portion the first portion has a germanium concentration that increases a first time as a first distance from the substrate increases;
- modifying a first time at least one flow rate of the first reactants to grow a second portion of the material, wherein after the growing the second portion the second portion has a germanium concentration that decreases a first time as a second distance from the substrate increases;
- and
- modifying a second time at least one flow rate of the first reactants to grow a third portion of the material, wherein after the growing the third portion of the material the third portion has a germanium concentration that increases a second time as a third distance from the substrate increases.
A method of manufacturing a semiconductor device, the method comprising:
- forming a recess in a semiconductor fin;
- growing a first portion of a first material within the recess, wherein the growing the first portion increases a concentration of germanium being grown as the growing the first portion continues;
- growing a second portion of the first material within the recess, wherein the growing the second portion reduces the concentration of germanium being grown as the growing the second portion continues;
- and
- growing a third portion of the first material within the recess, wherein the growing the third portion increases the concentration of germanium being grown as the growing the third portion continues.
Dependencies are inferred from the claim text.