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US 2020/0006493 A1Published application
Semiconductor substrate
AssigneeSicoxs Corporation
InventorsKo IMAOKA, Takanori MURASAKI, Toshihisa SHIMO, Hidetsugu UCHIDA, Akiyuki MINAMI
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Abstract
A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1×1021 (atoms/cm3) or more of particular atoms.
Claims17
1-12. (canceled)
A semiconductor substrate comprising:
- a single-crystalline SiC substrate;
- and
- a polycrystalline SiC substrate,
- wherein
- the single-crystalline SiC substrate and the polycrystalline SiC substrate are bonded via an interface layer,
- the interface layer is a composite material containing carbon and silicon,
- the interface layer contains 1×1021 (atoms/cm3) or more of silicon (Si) atoms, and
- in an element composition ratio in the composite material, a ratio of silicon is more than that of carbon.
5 more elements
A semiconductor substrate comprising:
- a single-crystalline SiC substrate;
- and
- a polycrystalline SiC substrate,
- wherein
- the single-crystalline SiC substrate and the polycrystalline SiC substrate are bonded via an interface layer,
- the interface layer is a composite material containing carbon and silicon,
- the interface layer contains 1×1021 (atoms/cm3) or more of carbon (C) atoms, and
- in an element composition ratio in the composite material, a ratio of carbon is more than that of silicon.
5 more elements
Dependencies are inferred from the claim text.