US 2020/0006491 A1 · SOURCE OR DRAIN STRUCTURES WITH RELATIVELY HIGH GERMANIUM CONTENT

Abstract

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, integrated circuit structures having source or drain structures with a relatively high germanium content are described. In an example, an integrated circuit structure includes a fin including a semiconductor material. A gate stack is over an upper fin portion of the fin. A first epitaxial source or drain structure is embedded in the fin at a first side of the gate stack. A second epitaxial source or drain structure is embedded in the fin at a second side of the gate stack. The first and second epitaxial source or drain structures include silicon and germanium and have a same or greater atomic concentration of germanium than the fin.

Claims21

Dependent claims

An integrated circuit structure, comprising:

a fin comprising silicon and germanium, the fin having a lower fin portion and an upper fin portion;
a gate stack over the upper fin portion of the fin, the gate stack having a first side opposite a second side;
a first epitaxial source or drain structure embedded in the fin at the first side of the gate stack;
and
a second epitaxial source or drain structure embedded in the fin at the second side of the gate stack, the first and second epitaxial source or drain structures comprising a lower semiconductor layer and a capping semiconductor layer, the lower semiconductor layer comprising silicon and germanium and having a same or greater atomic concentration of germanium than the upper fin portion of the fin, and the capping semiconductor layer having a greater atomic concentration of germanium than the lower semiconductor layer.

2 more elements

Dependencies are inferred from the claim text.

Source or drain structures with relatively high germanium content

Life of this patent

Source or drain structures with relatively high germanium content

Life of this patent

Abstract

Claims21