MOSFET Having Drain Region Formed Between Two Gate Electrodes with Body Contact Region and Source Region Formed in a Double Well Region

A device comprising:

• a substrate of a first conductivity;
• a gate electrode over the substrate;
• a first drain/source region and a second drain/source region disposed on opposite sides of the gate electrode in the substrate, wherein the first drain/source region and the second drain/source region have a second conductivity;
• a first doped well having the first conductivity formed under the first drain/source region;
• a second doped well having the first conductivity formed under the first drain/source region, wherein the first doped well is embedded in the second doped well, and wherein the first doped well and the second doped well are configured such that a doping density gradually declines from the first drain/source region to the second drain/source region;
• and
• a body contact region of the first conductivity formed adjacent to the first drain/source region in the substrate, wherein the body contact region and the first drain/source region are formed in an alternating manner from a top view.

A transistor comprising:

• a first transistor comprising a first gate, a first source, a first drain and a first body contact, wherein:
• the first body contact and the first source are formed in an alternating manner from a top view;
• and
• the first source formed in a first stacked well region, wherein the first stacked well region comprises:
• a first region of a first conductivity formed over a substrate of the first conductivity;
• and
• a second region of the first conductivity embedded in the first region;
• a second transistor comprising a second gate, a second source, a second drain and a second body contact, wherein the first drain and the second drain are coupled together, and wherein:
• the second body contact and the second source are formed in an alternating manner from a top view;
• the second source formed in a second stacked well region, wherein the first stacked well region comprises:
• a third region of the first conductivity formed over the substrate;
• and
• a fourth region of the first conductivity embedded in the third region;
• and
• a body pickup ring surrounding the first transistor and the second transistor.