Self-aligned gate edge architecture with alternate channel material

A method for forming an integrated circuit structure, the method comprising:

• forming a first trench on a substrate, the substrate comprising a first semiconductor material;
• depositing a second semiconductor material into the first trench, the second semiconductor material compositionally different from the first semiconductor material;
• forming a plurality of fins on the substrate, at least some of the plurality of fins including the second semiconductor material;
• and
• forming an isolation wall between a first set of the plurality of fins and a second set of the plurality of fins, the isolation wall having a first sidewall that is a first distance from a right sidewall of a rightmost fin of the first set of fins, the isolation wall having a second sidewall that is a second distance from a left sidewall of a leftmost fin of the second set of fins;
• wherein the first set of fins includes at least one fin including the second semiconductor material;
• wherein the difference between the first and second distances is 2 nm or less, and the first and second distances being measured in the same horizontal plane.

A method for forming an integrated circuit structure, the method comprising:

• forming a plurality of fins on a substrate, the substrate comprising a first semiconductor material;
• forming an isolation structure between a first set of the plurality of fins and a second set of the plurality of fins;
• removing a first fin of the first set of fins to provide a first fin recess;
• depositing a second semiconductor material into the first fin recess, the second semiconductor material compositionally different from the first semiconductor material, the first fin including the second semiconductor material;
• and
• forming an isolation wall between the first set of fins and the second set of fins, the isolation wall having a first sidewall that is a first distance from a right sidewall of a rightmost fin of the first set of fins, the isolation wall having a second sidewall that is a second distance from a left sidewall of a leftmost fin of the second set of fins;
• wherein the difference between the first and second distances is 2 nm or less, and the first and second distances being measured in the same horizontal plane.