Reduction of electric field enhanced moisture penetration by metal shielding

A metal-insulator-metal (MIM) capacitor, comprising:

• a bottom electrode disposed over a substrate;
• a dielectric layer disposed over the bottom electrode;
• a top electrode disposed over the dielectric layer;
• a passivation layer disposed over the top electrode, wherein the passivation layer continuously extends over a top surface and sidewalls of the top electrode, sidewalls of the dielectric layer, and sidewalls of the bottom electrode;
• and
• a metal frame disposed over an upper surface of the passivation layer and along sidewalls of the passivation layer, wherein the metal frame has a protrusion that extends through the passivation layer and contacts a top surface of the top electrode.

A method for forming a metal-insulator-metal (MIM) capacitor, comprising:

• forming a bottom electrode layer over a substrate;
• forming a dielectric film over the bottom electrode layer;
• forming a top electrode layer over the dielectric film;
• performing a removal process to remove a portion of the top electrode layer, dielectric film, and bottom electrode layer to form a top electrode, dielectric layer, and a bottom electrode;
• forming a passivation layer over the top electrode and bottom electrode, wherein the passivation layer has a first opening above a top surface of the top electrode, and wherein the passivation layer has a second opening above a top surface of the bottom electrode;
• and
• forming a metal frame over the passivation layer, wherein the metal frame fills the first opening and contacts the top surface of the top electrode through the first opening.