Image Sensor Device and Method

A method comprising:

• forming a first pixel region, a second pixel region and a third pixel region in a semiconductor substrate;
• depositing a first material over first pixel region, a second pixel region and a third pixel region;
• after depositing the first material, depositing a second material over the first pixel region and the second pixel region, the second material being different from the first material, wherein a top surface of the first material above the third pixel region is exposed after depositing the second material;
• after depositing the second material, depositing a third material over the first pixel region, the third material being different from the first material and the second material, wherein the top surface of the first material above the third pixel region is exposed after depositing the third material;
• forming a first color filter over the first pixel region;
• forming a second color filter over the second pixel region;
• and
• forming a third color filter over the third pixel region, a topmost surface of the first color filter being level with a topmost surface of the second color filter and a topmost surface of the third color filter.

A method comprising:

• forming a first pixel region, a second pixel region and a third pixel region in a semiconductor substrate;
• forming a first anti-reflection coating (ARC) over the first pixel region, wherein forming the first ARC comprises:
• forming a first dielectric material over the first pixel region, the first dielectric material having a first thickness;
• forming a second dielectric material over the first dielectric material, the second dielectric material being different from the first dielectric material, the second dielectric material having a second thickness;
• and
• forming a third dielectric material over the second dielectric material;
• forming a second ARC over the second pixel region, wherein forming the second ARC comprises:
• forming the first dielectric material over the second pixel region, the first dielectric material having the first thickness;
• and
• forming the second dielectric material over the first dielectric material, the second dielectric material having the second thickness;
• forming a third ARC over the third pixel region, wherein forming the third ARC comprises forming the first dielectric material over the third pixel region, the first dielectric material having the first thickness;
• forming a first color filter over the first ARC;
• forming a second color filter over the second ARC;
• and
• forming a third color filter over the third ARC, a topmost surface of the first color filter being level with a topmost surface of the second color filter and a topmost surface of the third color filter.