Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorYuta ENDO
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Abstract
A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.
Claims20
A semiconductor device comprising:
- a transistor over an insulating surface, the transistor including:
- a first oxide semiconductor layer;
- a source electrode layer and a drain electrode layer;
- a first insulating film over the first oxide semiconductor layer;
- and
- a gate electrode layer over the first oxide semiconductor layer with the first insulating film therebetween;
- a capacitor over the insulating surface, the capacitor comprising:
- a second oxide semiconductor layer;
- a transparent conductive film;
- and
- a dielectric serving as a dielectric of the capacitor,
- wherein the second oxide semiconductor layer is formed in the same step as the first oxide semiconductor layer and changed to have increased conductivity than the first oxide semiconductor layer.
A semiconductor device comprising:
- a transistor over an insulating surface, the transistor including:
- a first oxide semiconductor layer;
- a source electrode layer and a drain electrode layer;
- a first insulating film over the first oxide semiconductor layer;
- and
- a gate electrode layer over the first oxide semiconductor layer with the first insulating film therebetween;
- a capacitor over the insulating surface, the capacitor comprising:
- a second oxide semiconductor layer;
- a transparent conductive film;
- and
- a dielectric serving as a dielectric of the capacitor,
- wherein the first oxide semiconductor layer and the second oxide semiconductor layer are deposited at the same step, and
- wherein an impurity element is added to the second oxide semiconductor layer.
Dependencies are inferred from the claim text.