Display device
AssigneeJapan Display Inc.
InventorsKoji YAMAMOTO, Tatsuya ISHII
Life of this patent
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Abstract
To make the dimension of an electrostatic protection circuit small with the same maintained high in sensitivity. The electrostatic protection circuit is of the configuration that a first diode and a second diode are connected in series, wherein a semiconductor layer owned by each diode is configured to be sandwiched between a gate electrode and a conductive light shielding film. The light shielding film is formed to overlap with the semiconductor layer and has a wider area than the semiconductor layer. This results in having a gate covering the semiconductor layer from an upper side and a back gate covering the semiconductor layer from a lower side, so that the sensitivity can be maintained high irrespective of decreasing the electrostatic protection circuit in dimension.
Claims11
A display device having a substrate and an electrostatic protection circuit formed on the substrate,
- the electrostatic protection circuit having a configuration in which a first connection wire, a first diode, a third connection wire, a second diode, and a second connection wire are connected in series, and a third connection wire has a first terminal and a second terminal;
- wherein
- the first diode has a first semiconductor layer and a first gate electrode, the first gate electrode has a first region connected to the third connection wire, and a second region overlapping the first semiconductor layer,
- the first diode has, as viewed in a cross-sectional view, a structure in which a first light shielding film is formed on the substrate, the first semiconductor layer is formed over the first light shielding film, and the second region of the first gate electrode layer is formed over the first semiconductor,
- the second diode has a second semiconductor layer and a second gate electrode, the second gate electrode has a third region connected to the third connection wire, and a fourth region overlapping the second semiconductor layer,
- the second diode has, as viewed in a cross-sectional view, a structure in which a second light shielding film is formed over the substrate, the second semiconductor layer is formed on the second light shielding film, and the fourth region of the second gate electrode layer is formed over the second semiconductor.
Dependencies are inferred from the claim text.