Transistors stacked on front-end p-type transistors

A method for forming an integrated circuit (IC), the method comprising:

• forming a first transistor, wherein the first transistor is a p-type transistor with a channel in a substrate, and the first transistor includes a first source electrode and a first drain electrode;
• forming a first metal contact coupled to the first source electrode;
• forming a second metal contact coupled to the first drain electrode;
• forming an insulator layer above the first transistor, wherein the insulator layer is next to the first metal contact, and next to the second metal contact;
• and
• forming a second transistor above the insulator layer, wherein the second transistor includes a second source electrode and a second drain electrode, and the second source electrode is coupled to the first metal contact, or the second drain electrode is coupled to the second metal contact.

A computing device, comprising:

• a circuit board;
• and
• an integrated circuit (IC) coupled to the circuit board, wherein the IC includes:
• a first transistor, wherein the first transistor is a p-type transistor with a channel in a substrate, and the first transistor includes a first source electrode and a first drain electrode;
• a first metal contact coupled to the first source electrode;
• a second metal contact coupled to the first drain electrode;
• an insulator layer above the first transistor, wherein the insulator layer is next to the first metal contact, and next to the second metal contact;
• and
• a second transistor above the insulator layer, wherein the second transistor includes a second source electrode and a second drain electrode, and the second source electrode is coupled to the first metal contact, or the second drain electrode is coupled to the second metal contact.