Three-dimensional non-volatile semiconductor memory device having replacement gate

Abstract

The disclosed technology relates generally to semiconductor devices and more particularly to three dimensional semiconductor memory devices, such as vertical three dimensional non-volatile memory devices. In one aspect, a vertical three-dimensional semiconductor memory device comprises a memory block comprising at least one memory hole formed through a stack of alternating layers of control gate layers and dielectric layers, wherein the memory hole is filled with a plurality of materials forming at least one memory cell. The semiconductor memory device additionally includes at least one trench formed through the stack so as to define part of a boundary of the memory block, wherein a sidewall of the trench comprises the control gate layers each having at least a portion that is in part laterally recessed relative to vertically adjacent dielectric layers, and wherein the trench is filled with an electrically conductive material.

Dependencies are inferred from the claim text.